BSC025N03MSG
MOSFET
OptiMOSª3M-SeriesPower-MOSFET,30V
SuperSO8
8
Features
•Optimizedfor5Vdriverapplication(Notebook,VGA,POL)
•LowFOMSWforHighFrequencySMPS
•100%avalanchetested
•N-channel
•Verylowon-resistanceRDS(on)@VGS=4.5V
•ExcellentgatechargexRDS(on)product(FOM)
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Superiorthermalresistance
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
Table1KeyPerformanceParameters
3
6
5
3
2
4
7
8
1
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
30
V
G4
5D
RDS(on),max,VGS=10V
2.5
mΩ
RDS(on),max,VGS=4.5V
3
mΩ
ID
147
A
Type/OrderingCode
Package
BSC025N03MS G
PG-TDSON-8
1)
Marking
025N03MS
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
147
93
134
85
23
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=4.5V,TA=25°C,RthJA=50K/W2)
-
588
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
135
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
83
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1.5
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
18
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=16V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.4
2.1
3
2.5
mΩ
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
0.8
1.6
2.8
Ω
-
Transconductance
gfs
55
110
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
30
-
Gate threshold voltage
VGS(th)
1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
5700
7600
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance1)
Coss
-
1600
2100
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
120
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
22
-
ns
VDD=15V,VGS=4.5V,ID=30A,
RG=1Ω
Rise time
tr
-
11
-
ns
VDD=15V,VGS=4.5V,ID=30A,
RG=1Ω
Turn-off delay time
td(off)
-
29
-
ns
VDD=15V,VGS=4.5V,ID=30A,
RG=1Ω
Fall time
tf
-
11
-
ns
VDD=15V,VGS=4.5V,ID=30A,
RG=1Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge1)
Gate charge at threshold1)
Values
Min.
Typ.
Max.
Qgs
-
15
20
nC
VDD=15V,ID=30A,VGS=0to4.5V
Qg(th)
-
9.1
12
nC
VDD=15V,ID=30A,VGS=0to4.5V
Qgd
-
7.8
13
nC
VDD=15V,ID=30A,VGS=0to4.5V
1)
Qsw
-
14
21
nC
VDD=15V,ID=30A,VGS=0to4.5V
1)
Gate charge total
Qg
-
36
48
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.7
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Qg
-
74
98
-
VDD=15V,ID=30A,VGS=0to10V
Qg(sync)
-
31
41
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
41
55
-
VDD=15V,VGS=0V
1)
Gate to drain charge
Switching charge
Gate charge total1)
1)
Gate charge total, sync. FET
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See figure 16 for gate charge parameter definition.
Final Data Sheet
4
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
76
A
TC=25°C
-
588
A
TC=25°C
-
0.82
1.1
V
VGS=0V,IF=30A,Tj=25°C
-
-
20
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Qrr
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
100
150
125
80
100
ID[A]
Ptot[W]
60
4.5 V
75
10 V
40
50
20
0
25
0
40
80
120
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);parameter:VGS
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100 µs
100
0.5
101
ZthJC[K/W]
ID[A]
DC
1 ms
10 ms
0.2
0.1
10-1
0
10
0.05
0.02
0.01
single pulse
10-1
10-1
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
300
6
10 V
250
5V
200
4
3.5 V
4V
150
100
3V
RDS(on)[mΩ]
ID[A]
4.5 V
3.2 V
3.5 V
4V
4.5 V
2
3.2 V
5V
6V
10 V
3V
50
2.8 V
0
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
240
200
160
160
ID[A]
gfs[S]
120
120
80
80
40
40
150 °C
0
25 °C
0
1
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
4
2.0
3
1.5
VGS(th)[V]
2.5
RDS(on)[mΩ]
5
98 %
typ
2
1
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
Coss
3
102
IF[A]
C[pF]
10
Crss
102
101
0
10
101
20
30
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
15 V
10
100 °C
24 V
VGS[V]
IAV[A]
125 °C
6V
8
25 °C
101
6
4
2
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
70
80
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
Figure2OutlineTape(PG-TDSON-8),dimensionsinmm
Final Data Sheet
11
Rev.2.0,2020-07-21
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
RevisionHistory
BSC025N03MS G
Revision:2020-07-21,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2020-07-21
Update current rating and footnotes
Trademarks
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Final Data Sheet
12
Rev.2.0,2020-07-21
